Figure 12 from Air spacer for 10nm FinFET CMOS and beyond

From FinFET to Nanosheets and Beyond

Parasitic Capacitances on Scaling Lateral Nanowire

Integration SpringerLink

Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node

Figure 4 from Air spacer for 10nm FinFET CMOS and beyond

Short-channel effect comparison of InSe FETs and silicon FinFETs a

Figure 8 from Air spacer for 10nm FinFET CMOS and beyond

Scaling aligned carbon nanotube transistors to a sub-10 nm node

DTCO flow for air spacer generation and its impact on power and performance at N7 - ScienceDirect